Datasheet MBT3906DW1 (ON Semiconductor) - 3
| Производитель | ON Semiconductor |
| Описание | Dual General Purpose Transistor |
| Страниц / Страница | 9 / 3 — MBT3906DW1. Figure 1. Delay and Rise Time. Figure 2. Storage and Fall … |
| Формат / Размер файла | PDF / 354 Кб |
| Язык документа | английский |
MBT3906DW1. Figure 1. Delay and Rise Time. Figure 2. Storage and Fall Time. Equivalent Test Circuit
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| MBT3906DW1T1G
ON Semiconductor | от 1.10 ₽ | |
| MBT3906DW1T1G
ON Semiconductor | 17 ₽ | |
| MBT3906DW1T1
ON Semiconductor | по запросу | |
| MBT3906DW1T1G
ON Semiconductor | по запросу | |
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MBT3906DW1
3 V 3 V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 Cs < 4 pF* 1N916 Cs < 4 pF* 10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% t 10.9 V 1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 Cobo 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q, CHARGE (pC) 300 CAP 2.0 200 QT QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V I 200 200 B1 = IB2 IC/IB = 20 100 100 70 70 50 tr @ VCC = 3.0 V TIME (ns) 50 ALL TIME (ns) 30 15 V 30 t , F f 20 20 IC/IB = 10 40 V 10 2.0 V 10 7 t 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Fall Time www.onsemi.com 3
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