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Datasheet RB751V40T1G (ON Semiconductor)

ПроизводительON Semiconductor
ОписаниеSchottky Barrier Diode
Страниц / Страница5 / 1 — http://onsemi.com. Features. 40 V SCHOTTKY. BARRIER DIODE. MAXIMUM …
Формат / Размер файлаPDF / 123 Кб
Язык документаанглийский

http://onsemi.com. Features. 40 V SCHOTTKY. BARRIER DIODE. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SOD−323. CASE 477. STYLE 1

Datasheet RB751V40T1G ON Semiconductor

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Диод Шоттки малого сигнала, Одиночный, 30 В, 30 мА, 370 мВ, 500 мА, 150 °C
AllElco Electronics
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NSVRB751V40T1G
ON Semiconductor
от 3.11 ₽
NSVRB751V40T1G
ON Semiconductor
от 5.71 ₽
ChipWorker
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NSVRB751V40T1G
ON Semiconductor
8.24 ₽
727GS
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NSVRB751V40T1G
ON Semiconductor
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Модельный ряд для этого даташита

Текстовая версия документа

link to page 1 RB751V40T1G Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
http://onsemi.com Features
• Extremely Fast Switching Speed
40 V SCHOTTKY
• Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc
BARRIER DIODE
• Low Reverse Current • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CATHODE ANODE Compliant
MAXIMUM RATINGS
2
Rating Symbol Value Unit
Peak Reverse Voltage V 1 RM 40 V Reverse Voltage V
SOD−323
R 30 Vdc
CASE 477
Forward Continuous Current (DC) IF 30 mA
STYLE 1
Peak Forward Surge Current IFSM 500 mA Electrostatic Discharge ESD HBM Class: 1C
MARKING DIAGRAM
MM Class: A
THERMAL CHARACTERISTICS
5E MG
Characteristic Symbol Max Unit
G Total Device Dissipation FR−5 Board, PD 200 mW (Note 1) TA = 25°C 5E = Specific Device Code Derate above 25°C 1.57 mW/°C M = Date Code Thermal Resistance Rq G = Pb−Free Package JA 635 °C/W Junction−to−Ambient (Note: Microdot may be in either location) Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Device Package Shipping
† 1. FR−5 Minimum Pad RB751V40T1G SOD−323 3000 / Tape & (Pb−Free) Reel NSVRB751V40T1G SOD−323 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. 5 RB751V40T1/D
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