Datasheet NSI50350AD (ON Semiconductor) - 2

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NSI50350ADT4G MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Anode−Cathode Voltage Vak Max 50 V Reverse Voltage VR 500 mV Operating and Storage Junction Temperature Range TJ, Tstg −55 to +175 °C ESD Rating: Human Body Model ESD Class 3B (8000 V) Machine Model Class C (400 V) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 315 350 385 mA Voltage Overhead (Note 2) Voverhead 1.8 V Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 376.5 424 474.5 mA 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 300 sec, using 900 mm2 DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu (or equivalent), in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 70% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 360 msec.
Figure 1. CCR Voltage−Current Characteristic http://onsemi.com 2