Datasheet SiC967 (Vishay) - 5

SiC967
www.vishay.com Vishay Siliconix
ELECTRICAL SPECIFICATIONS
(VIN = VCIN = 48 V, TJ = -40 °C to +125 °C, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Fault Protections
ILM tied to VDD - 10 - Valley current limit IOCP ILM is not connect - 7.5 - A ILM tied to AGND - 5 - Output OVP threshold OVP - 20 - VFB with respect to 0.8 V reference % Output UVP threshold UVP - -80 - OTPR Rising temperature - 150 - Over temperature protection °C OTPHYST Hysteresis - 35 -
Power Good
VFB_RISING_VTH_OV VFB rising above 0.8 V reference - 20 - Power good output threshold % VFB_FALLING_VTH_U VFB falling below 0.8 V reference - -10 - V Power good hysteresis PGOOD_HYST 40 60 80 mV Power good on resistance RON_PGOOD - 15 25 Power good delay time tDLY_PGOOD 15 25 35 μs
EN / MODE / Ultrasonic Threshold
EN logic high level VEN_H 1.2 1.4 1.5 V EN logic low level VEN_L 1.00 1.12 1.25 EN logic hysteresis VEN_HYS 200 280 360 mV EN pull down resistance REN - 5 - M Ultrasonic mode high Level UHIGH 2 - - V Ultrasonic mode low level ULOW - - 0.8 Mode pull up current IMODE - 5 - μA Power save mode enabled, V Mode 1 DD, - 2 - VDRV pre-reg on Power save mode disabled, V Mode 2 DD, - 301 - VDRV pre-reg on R Power save mode disabled, MODE k Mode 3 VDRV pre-reg off, VDD pre-reg on, - 499 - provide external VDRV Power save mode enabled, Mode 4 VDRV pre-reg off, VDD pre-reg on, - 1000 - provide external VDRV
Soft Start
Soft start timing (1) - 6 - ms
Note
(1) Guaranteed by design S23-0680-Rev. C, 28-Aug-2023
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