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Datasheet BAR42, BAR43 (STMicroelectronics) - 3

ПроизводительSTMicroelectronics
ОписаниеSmall Signal Schottky Diode
Страниц / Страница7 / 3 — BAR42, BAR43. Characteristics. Table 5. Dynamic characteristics (Tj = 25 …
Формат / Размер файлаPDF / 122 Кб
Язык документаанглийский

BAR42, BAR43. Characteristics. Table 5. Dynamic characteristics (Tj = 25 °C). Symbol. Test conditions. Min. Typ. Max. Unit

BAR42, BAR43 Characteristics Table 5 Dynamic characteristics (Tj = 25 °C) Symbol Test conditions Min Typ Max Unit

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Диод Шоттки малого сигнала, Одиночный, 30 В, 100 мА, 400 мВ, 750 мА, 150 °C
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STMicroelectronics
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BAR42, BAR43 Characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Symbol Test conditions Min. Typ. Max. Unit
C Junction capacitance Tj = 25 °C VR = 1 V F = 1 MHz 7 pF I C Reverse recovery time F = 10 mA IR = 10 mA Tj = 25 °C Irr = 1 mA RL = 100 Ω 5 pF η C Detection efficiency L = 300 pF F = 45 MHz Tj = 25 °C Vi = 2 V RL = 50 Ω 80 ps
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) IFM(A) IFM(A)
2.00E-2 5E-1 1.80E-2 1.60E-2 T =100°C j 1E-1 1.40E-2 T =100°C j 1.20E-2 1.00E-2 8.00E-3 T =50°C T j j=25°C 1E-2 T =50°C T =25°C j j 6.00E-3 4.00E-3 2.00E-3
VFM(V) VFM(V)
0.00E+0 1E-3 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse voltage applied (typical values) junction temperature IR(µA) IR(µA)
1E+2 1E+4 T =100°C V =30V j R 1E+3 1E+1 1E+2 1E+0 1E+1 T =50°C j 1E+0 1E-1 T =25°C j 1E-1
VR(V) VR(V)
1E-2 1E-2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 DocID3288 Rev 5 3/7 7 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
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