Datasheet MOC3051M, MOC3052M, MOC3053M (ON Semiconductor) - 3

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MOC3051M, MOC3052M, MOC3053M MAXIMUM RATINGS
TA = 25°C unless otherwise specified.
Symbol Parameter Value Unit TOTAL DEVICE
TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +85 °C TJ Junction Temperature Range −40 to +100 °C TSOL Lead Solder Temperature 260 for 10 seconds °C PD Total Device Power Dissipation at 25°C Ambient 330 mW Derate Above 25°C 4.4 mW/°C
EMITTER
IF Continuous Forward Current 60 mA VR Reverse Voltage 3 V PD Total Power Dissipation at 25°C Ambient 100 mW Derate Above 25°C 1.33 mW/°C
DETECTOR
VDRM Off−State Output Terminal Voltage 600 V ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A PD Total Power Dissipation at 25°C Ambient 300 mW Derate Above 25°C 4 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Characteristic Min Typ Max Unit EMITTER
VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 3 V 0.05 100 mA
DETECTOR
IDRM Peak Blocking Current, Either Direction VDRM = 600 V, IF = 0 10 100 nA (Note 1) VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak, 2.2 2.5 V IF = 0 dv/dt Critical Rate of Rise of Off−State Voltage IF = 0, VDRM = 600 V 1000 V/ms
TRANSFER CHARACTERISTICS Symbol DC Characteristic Test Conditions Device Min Typ Max Unit
IFT LED Trigger Current, Main Terminal MOC3051M 15 mA Either Direction Voltage = 3 V (Note 2) MOC3052M 10 MOC3053M 6 IH Holding Current, All 540 mA Either Direction
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