Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 8
| Производитель | NXP |
| Описание | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Страниц / Страница | 16 / 8 — Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent … |
| Формат / Размер файла | PDF / 1.1 Мб |
| Язык документа | английский |
Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent Source and Load Impedance. MRF8P29300HR6 MRF8P29300HSR6
16 предложений от 14 поставщиков FET RF 2CH 65V 2.9GHZ NI1230. RF Mosfet LDMOS (Dual) 30V 100mA 2.9GHz 13.3dB 320W NI-1230. Transistors - FETs, MOSFETs -... |
| MRF8P29300HR6
NXP | 13 160 ₽ | |
| MRF8P29300HR6
NXP | 39 210 ₽ | |
| MRF8P29300HR6
Freescale | по запросу | |
| MRF8P29300HR6
NXP | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
Zo = 10 Ω f = 2900 MHz f = 2900 MHz f = 2700 MHz Zload Zsource f = 2700 MHz VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak
f Zsource Zload MHz
Ω Ω 2700 4.7 - j2.0 7.8 - j1.0 2800 4.7 - j1.7 8.7 - j0.2 2900 4.7 - j1.5 9.4 - j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Device Output Matching + Under - Matching Network Test Network - +
Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 8 Freescale Semiconductor
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