Datasheet MOC8101, MOC8102, MOC8103, MOC8104 (Vishay) - 2

MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT
Reverse voltage VR 6.0 V Forward continuous current IF 60 mA Surge forward current t ≤ 10 μs IFSM 2.5 A Power dissipation Pdiss 100 mW Derate linearly from 25°C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 7.0 V Collector current IC 50 mA Derate linearly from 25°C 2.0 mW/°C Power dissipation Pdiss 150 mW
COUPLER
Derate linearly from 25 °C 3.33 mW/°C Total power dissipation Ptot 250 mW Storage temperature Tstg -55 to +150 °C Operating temperature Tamb -55 to +100 °C Junction temperature Tj 100 °C Soldering temperature (1) max. 10 s, dip soldering: T distance to seating plane ≥ 1.5 mm sld 260 °C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP)
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage IF = 10 mA VF - 1.25 1.5 V Breakdown voltage IR = 10 μA VBR 6.0 - - V Reverse current VR = 6.0 V IR - 0.01 10 μA Capacitance VR = 0 V, f = 1.0 MHz CO - 25 - pF Thermal resistance Rthja - 750 - K/W
OUTPUT
Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE - 5.2 - pF VCE = 10 V, Tamp = 25 °C MOC8101 ICEO1 - 1.0 50 nA Collector emitter dark current VCE = 10 V, Tamp = 100 °C MOC8102 ICEO1 - 1.0 - μA Collector emitter breakdown voltage IC = 1.0 mA BVCEO 30 - - V Emitter collector breakdown voltage IE = 100 μA BVECO 7.0 - - V Thermal resistance Rthja - 500 - K/W
COUPLER
Saturation voltage collector emitter IF = 5.0 mA VCEsat - 0.25 0.4 V Coupling capacitance CC - 0.6 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Rev. 1.8, 13-Apr-2023
2
Document Number: 83660 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000