Datasheet FDS6675 (Fairchild) - 2

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features
This P-Channel Logic Level MOSFET is produced -11 A, -30 V. R = 0.014 Ω @ V = -10 V, DS(ON) GS using ON Semiconductor's advanced PowerTrench R = 0.020 Ω @ V = -4.5 V. DS(ON) GS process that has been especially tailored to minimize the Low gate charge (30nC typical). on-state resistance and yet maintain low gate charge for superior switching performance. High performance trench technology for extremely low R . DS(ON) These devices are well suited for notebook computer applications: load switching and power management, High power and current handling capability. battery charging circuits, and DC/DC conversion.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D
5 4
D D D FDS
6 3
6675
7 2
G S SO-8 pin 1 S
8 1
S Absolute Maximum Ratings
T = 25oC unless otherwise noted A
Symbol Parameter FDS6675 Units
V Drain-Source Voltage -30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) -11 A D - Pulsed -50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG
THERMAL CHARACTERISTICS
Rθ Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W JA Rθ Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W JC Publication Order Number: © 1998 Semiconductor Components Industries, LLC. FDS6675/D October-2017, Rev. 3