Datasheet MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M (ON Semiconductor) - 3

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MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS EMITTER
VF Input Forward Voltage IF = 30 mA All − 1.25 1.50 V IR Reverse Leakage Current VR = 6 V All − 0.01 100 mA
DETECTOR
IDRM1 Peak Blocking Current, VDRM = 600 V, IF = 0 (Note 1) All − − 100 nA Either Direction VTM Peak On−State Voltage, ITM = 100 mA peak, IF = 0 All − 1.8 3.0 V Either Direction dv/dt Critical Rate of Rise of IF = 0 (Note 2) All 1000 2000 − V/ms Off−State Voltage
TRANSFER CHARACTERISTICS
IFT LED Trigger Current Main Terminal Voltage = 3 V MOC3031M − − 15 mA (Note 3) MOC3041M MOC3032M − − 10 MOC3042M MOC3033M − − 5 MOC3043M IH Holding Current, Either All − 400 − mA Direction
ZERO CROSSING CHARACTERISTICS
VIH Inhibit Voltage IF = rated IFT, MT1−MT2 voltage All − − 20 V above which device will not trigger off−state IDRM2 Leakage in Inhibited State IF = rated IFT, rated VDRM All − − 2 mA off−state
ISOLATION CHARACTERISTICS
VISO Isolation Voltage (Note 4) t = 1 Minute All 4170 − − VACRMS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only. 3. Al devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3031M and MOC3041M, 10 mA for MOC3032M and MOC3042M, 5 mA for MOC3033M and MOC3043M) and absolute maximum IF (60 mA). 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common.
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