Datasheet BT138-800E (NXP) - 2

link to page 8 link to page 8
NXP Semiconductors BT138-800E 4Q Triac Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67% - 150 - V/µs voltage of VDRM); exponential waveform; gate open circuit
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base; main terminal 2 1 2 3
TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
BT138-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB BT138-800E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB BT138-800E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 2 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Limiting values 8. Thermal characteristics 9. Characteristics 10. Package outline 11. Legal information