Datasheet MB2M, MB4M, MB6M (Vishay) - 2

MB2M, MB4M, MB6M
www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
RθJA (1) 85 Typical thermal resistance R (2) 70 °C/W θJA RθJL (1) 20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 35 T = 40 °C Aluminum Substrate A Single Half Sine-Wave 0.7 30 rrent (A) u 0.6 rrent (A) 25 u 0.5 20 f = 50 Hz f = 60 Hz rge C 0.4 Glass u Epoxy 15 ard Rectified C 0.3 PCB ard S wro rw o 10 0.2 F k a age F 0.1 Resistive or Inductive Load 5 er Pe 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Jul-2020
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