MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor 10 30 T = 25 °C J 25 f = 1.0 MHz T = 150 °C V = 50 mV J p-p rrent (A) sig u 1 T = 25 °C J 20 ard C rw o 15 s F u 0.1 10 nction Capacitance (pF) u Pulse Width = 300 µs J 5 1 % Duty Cycle Instantaneo 0.01 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 T = 125 °C 10 J erse Leakage v 1 s Re u rrent (µA) u C 0.1 T = 25 °C J Instantaneo 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style MBM 0.161 (4.10) 0.144 (3.65) 0.190 (4.83) 0.179 (4.55) 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.106 (2.70) 0.039 (0.99) 0.090 (2.30) 0.148 (3.75) 0.016 (0.41) 0.132 (3.35) 0.006 (0.15) 0.029 (0.74) 0.147 (3.73) 0.028 (0.71) 0.017 (0.43) 0.105 (2.67) 0.137 (3.48) 0.020 (0.51) 0.095 (2.41) 10° to 15° Revision: 15-Jul-2020 3 Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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