Datasheet NCV7329 (ON Semiconductor) - 6

link to page 9 link to page 9 link to page 9 link to page 9 link to page 10 link to page 10 link to page 9 link to page 9 link to page 9
NCV7329 Table 5. AC CHARACTERISTICS
(VBB = 5 V to 18 V; TJ = −40°C to +150°C; unless otherwise specified. For the transmitter parameters, the following bus loads are considered: L1 = 1 kW / 1 nF; L2 = 660 W / 6.8 nF; L3 = 500 W / 10 nF)
Symbol Parameter Conditions Min. Typ. Max. Unit LIN TRANSCEIVER
D1 Duty Cycle 1 = tBUS_REC(min) / (2xtBIT) THREC(max) = 0.744 x VBB 0.396 0.500 (See Figure 4) THDOM(max) = 0.581 x VBB tBIT = 50 ms VBB = 5 V to 18 V D2 Duty Cycle 2 = tBUS_REC(max) / (2xtBIT) THREC(min) = 0.422 x VBB 0.500 0.581 (See Figure 4) THDOM(min) = 0.284 x VBB tBIT = 50 ms VBB = 5 V to 18 V D3 Duty Cycle 3 = tBUS_REC(min) / (2xtBIT) THREC(max) = 0.778 x VBB 0.417 0.500 (See Figure 4) THDOM(max) = 0.616 x VBB tBIT = 96 ms VBB = 5 V to 18 V D4 Duty Cycle 4 = tBUS_REC(max) / (2xtBIT) THREC(min) = 0.389 x VBB 0.500 0.590 (See Figure 4) THDOM(min) = 0.251 x VBB tBIT = 96 ms VBB = 5 V to 18 V tTX_PROP_DOWN Propagation Delay of TxD to LIN. TxD 14 ms High to Low (See Figure 7) tTX_PROP_UP Propagation Delay of TxD to LIN. TxD 14 ms Low to High (See Figure 7)
LIN RECEIVER
tRX_PD Propagation Delay of Receiver, Rising RRxD = 2.4 kW; CRXD = 20 pF 0.1 6 ms and falling Edge (See Figure 5) tRX_SYM Propagation Delay Symmetry RRxD = 2.4 kW; CRXD = 20 pF; −2 +2 ms Rising edge with respect to fall- ing edge
MODE TRANSITIONS AND TIMEOUTS
tLIN_WAKE Duration of LIN Dominant for Detection Sleep Mode 40 70 150 ms of Wake−up via LIN Bus (See Figure 6) tTxD_TIMEOUT TxD Dominant Timeout Normal Mode, TxD = Low 14 25 46 ms tINIT_NORM Time From Rising Edge of EN pin to the 15 30 75 ms moment when the transmitter is able to correctly transmit tENABLE Duration of EN pin in High Level State 11 20 55 ms for transition to Normal Mode tDISABLE Duration of EN pin in Low Level State 11 20 55 ms for transition to Sleep Mode tTO_STB Delay from LIN Bus Dominant to Sleep Mode 5 10 40 ms Recessive Edge to Entering of Standby Mode after Valid LIN Wake−up (See Figure 6)
THERMAL SHUTDOWN
TJ(sd) Shutdown Junction Temperature Temperature Rising 160 180 200 °C 9. Values based on design and characterization. Not tested in production.
www.onsemi.com 6