Datasheet NCP1729 (ON Semiconductor) - 2

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NCP1729 MAXIMUM RATINGS* Rating Symbol Value Unit
Input Voltage Range (Vin to GND) Vin −0.3 to 6.0 V ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Output Voltage Range (Vout to GND) Vout −6.0 to 0.3 V ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Output Current Iout 100 mA ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Output Short Circuit Duration (Vout to GND) tSC Indefinite sec ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Operating Junction Temperature TJ 150 °C ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Power Dissipation and Thermal Characteristics ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Thermal Resistance, Junction−to−Air RJA 256 °C/W Maximum Power Dissipation @ TA = 70°C PD 313 mW ° ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Storage Temperature ÁÁÁÁÁÁ Tstg ÁÁÁÁÁÁÁÁ −55 to 150 ÁÁÁÁ C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *ESD Ratings ESD Machine Model Protection up to 200 V, Class B ESD Human Body Model Protection up to 2000 V, Class 2
ELECTRICAL CHARACTERISTICS
(Vin = 5.0 V, C1 = 3.3 F, C2 = 3.3 F, TA = −40°C to 85°C, typical values shown are for TA = 25°C unless otherwise noted. See Figure 14 for Test Setup.)
Characteristic Symbol Min Typ Max Unit
Operating Supply Voltage Range (SHDN = Vin, RL = 10 k) Vin 1.5 to 5.5 1.15 to 6.0 − V Supply Current Device Operating (SHDN = 5.0 V, RL = ) Iin A TA = 25°C − 122 200 TA = 85°C − 128 200 Supply Current Device Shutdown (SHDN = 0 V) ISHDN A TA = 25°C − 0.4 − TA = 85°C − 1.7 − Oscillator Frequency fOSC kHz TA = 25°C 24.5 33.5 45.6 TA = −40°C to 85°C 19 − 54 Output Resistance (Iout = 25 mA, Note 1) Rout − 26 50 Voltage Conversion Efficiency (RL = ) VEFF 99 99.9 − % Power Conversion Efficiency (RL = 1.0 k) PEFF − 96 − % Shutdown Input Threshold Voltage (Vin = 1.5 V to 5.5 V) Vth(SHDN) V High State, Device Operating − 0.6 Vin − Low State, Device Shutdown − 0.5 Vin − Shutdown Input Bias Current pA High State, Device Operating, SHDN = 5.0 V IIH TA = 25°C − 5.0 − TA = 85°C − 100 − Low State, Device Shutdown, SHDN = 0 V IIL TA = 25°C − 5.0 − TA = 85°C − 100 − Wake−Up Time from Shutdown (RL = 1.0 k) tWKUP − 1.0 − ms 1. Capacitors C1 and C2 contribution is approximately 20% of the total output resistance.
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