Datasheet SI2302DS (Nexperia) - 2

SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001 Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23.
2. Features
■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package.
3. Applications
■ Battery management ■ High speed switch ■ Low power DC to DC converter.
4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol
1 gate (g)
3
2 source (s) d 3 drain (d) g
1 2
MBB076 s Top view MSB003
SOT23
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers