Datasheet SI2302DS (Nexperia) - 4

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor
03aa17 03aa25 120 120 P I der der (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 T T sp (oC) sp (oC) P I tot D P = ----------- × 100% I = ---------- × 100% der P der I tot 25° ( C ) D 25 C ° ( )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of solder point temperature. function of solder point temperature.
03ae92 102 ID (A) RDSon = VDS / ID 10 tp = 10 µs 1 1 ms 10 ms DC 10-1 100 ms 10-2 10-1 1 10 102 VDS (V) Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 3 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers