Datasheet SI2302DS (Nexperia) - 5

link to page 5
Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W
7.1 Transient thermal impedance
03ae91 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 10 0.05 tp P δ = T 0.02 single pulse tp t T 1 10-4 10-3 10-2 10-1 1 t 10 p (s) Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 4 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers