Datasheet SI2302DS (Nexperia) - 8

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor
03ag05 03ah78 1.2 10-1 ID VGS(th) (A) (V) 10-2 typ 0.8 min 10-3 min typ 10-4 0.4 10-5 0 10-6 -60 0 60 120 180 0 0.4 0.8 1.2 T V j (ºC) GS (V) ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.
03ae98 103 C (pF) Ciss 102 Coss Crss 10 10-1 1 10 102 VDS (V) VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 7 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers