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Datasheet D44VH10, D45VH10 (ON Semiconductor)

ПроизводительON Semiconductor
ОписаниеComplementary Silicon Power Transistors
Страниц / Страница5 / 1 — www.onsemi.com. 15 A. COMPLEMENTARY SILICON. Features. POWER TRANSISTORS. …
Формат / Размер файлаPDF / 116 Кб
Язык документаанглийский

www.onsemi.com. 15 A. COMPLEMENTARY SILICON. Features. POWER TRANSISTORS. 80 V, 83 W. PNP. NPN. MAXIMUM RATINGS. Rating. Symbol. Value. Unit

Datasheet D44VH10, D45VH10 ON Semiconductor

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link to page 1 D44VH10(NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high−speed switching applications, such as switching regulators and
www.onsemi.com
high frequency inverters. The devices are also well−suited for drivers for high power switching circuits.
15 A COMPLEMENTARY SILICON Features

POWER TRANSISTORS
Fast Switching • Key Parameters Specified @ 100°C
80 V, 83 W
• Low Collector−Emitter Saturation Voltage
PNP NPN
• Complementary Pairs Simplify Circuit Designs COLLECTOR 2, 4 COLLECTOR 2, 4 • These Devices are Pb−Free and are RoHS Compliant* 1 1
MAXIMUM RATINGS
BASE BASE
Rating Symbol Value Unit
Collector−Emitter Voltage V EMITTER 3 EMITTER 3 CEO 80 Vdc Collector−Emitter Voltage VCEV 100 Vdc 4 Emitter Base Voltage VEB 7.0 Vdc Collector Current − Continuous IC 15 Adc
TO−220 CASE 221A
Collector Current − Peak (Note 1) ICM 20 Adc
STYLE 1
Total Power Dissipation PD @ TC = 25°C 83 W 1 Derate above 25°C 0.67 W/°C 2 3 Operating and Storage Junction TJ, Tstg − 55 to 150 °C Temperature Range
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. D4xVH10G
THERMAL CHARACTERISTICS
AYWW
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RqJC 1.5 °C/W Thermal Resistance, Junction to Ambient RqJA 62.5 °C/W x = 4 or 5 Maximum Lead Temperature for Soldering TL 275 °C A = Assembly Location Purposes: 1/8″ from Case for 5 Seconds Y = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION Device Package Shipping
D44VH10G TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please D45VH10G TO−220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 8 D44VH/D
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