2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SJ160 Value –120 2SJ161 2SJ162 –140 –160 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Unit V VGSS ID ±15 –7 V A IDR Note 1 Pch –7 100 A W Tch Tstg 150 –55 to +150 °C °C 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ160 Symbol V (BR) DSX 2SJ161 2SJ162 Min –120 Typ — Max — Unit V –140 –160 — — — — V V Test Conditions ID = –10 mA, VGS = 10 V Gate to source breakdown voltage Gate to source cutoff voltage V (BR) GSS VGS (off) ±15 –0.15 — — — –1.45 V V IG = ±100 µA, VDS = 0 ID = –100 mA, VDS = –10 V Drain to source saturation voltage Forward transfer admittance VDS (sat) |yfs| — 0.7 — 1.0 –12 1.4 V S ID = –7 A, VGS = 0 Note 2 ID = –3 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 900 400 — — pF pF VGS = 5 V, VDS = –10 V, f = 1 MHz Reverse transfer capacitance Turn-on time Crss ton — — 40 230 — — pF ns VDD = –20 V ID = –4 A toff — 110 — ns Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 Note 2
