Datasheet 2N5655G, 2N5657G (ON Semiconductor)

link to page 1 2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and
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AC line relays.
Features 0.5 AMPERE POWER TRANSISTORS
• Excellent DC Current Gain
NPN SILICON
• High Current−Gain − Bandwidth Product
250−350 VOLTS, 20 WATTS
• These Devices are Pb−Free and are RoHS Compliant* COLLECTOR
MAXIMUM RATINGS
(Note 1) 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc 3 2N5655G 250 BASE 2N5657G 350 Collector−Base Voltage VCB Vdc 1 2N5655G 275 EMITTER 2N5657G 375 Emitter−Base Voltage VEB 6.0 Vdc Collector Current − Continuous IC 0.5 Adc Collector Current − Peak ICM 1.0 Adc
TO−225
Base Current IB 1.0 Adc
CASE 77−09 STYLE 1
Total Device Dissipation PD @ TC = 25°C 20 W Derate above 25°C 0.16 W/°C 1 2 3 Operating and Storage Junction TJ, Tstg – 65 to + 150 °C/W Temperature Range
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW 1. Indicates JEDEC registered data. 2
THERMAL CHARACTERISTICS
N565xG
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Y = Year WW = Work Week 2N565x = Device Code x = 5 or 7 G = Pb−Free Package
ORDERING INFORMATION Device Package Shipping
2N5655G TO−225 500 Units / Bulk (Pb−Free) 2N5657G TO−225 500 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please (Pb−Free) download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
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Publication Order Number:
December, 2013 − Rev. 12 2N5655/D