Datasheet STB19NF20, STD19NF20 STF19NF20, STP19NF20 (STMicroelectronics) - 4

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STB19NF20,STD19NF20,STF19NF20,STP19NF20 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, - 125 ns Q V rr Reverse recovery charge DD = 50 V - 0.55 µC (see Figure 17. Test circuit for I inductive load switching and diode RRM Reverse recovery current - 8.8 A recovery times) trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, - 148 ns Q V rr Reverse recovery charge DD = 50 V, Tj = 150 °C - 0.73 µC (see Figure 17. Test circuit for I inductive load switching and diode RRM Reverse recovery current - 9.9 A recovery times) 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DS4935
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Rev 7 page 4/30
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Ordering information 5 Package information 5.1 D²PAK (TO-263) type A package information 5.2 D²PAK (TO-263) type B package information 5.3 DPAK (TO-252) type A2 package information 5.4 DPAK (TO-252) type C2 package information 5.5 D²PAK and DPAK packing information 5.6 TO-220FP package information 5.7 TO-220 type A package information Revision history