Datasheet FGD4536 (ON Semiconductor) - 3
Производитель | ON Semiconductor |
Описание | 360 V PDP Trench IGBT |
Страниц / Страница | 9 / 3 — FGD4536. Package Marking and Ordering Information. Device Marking. … |
Формат / Размер файла | PDF / 1.3 Мб |
Язык документа | английский |
FGD4536. Package Marking and Ordering Information. Device Marking. Device. Package. Reel Size. Tape Width. Quantity

8 предложений от 8 поставщиков Trans IGBT Chip N-CH 360V 3-Pin(2+Tab) TO-252 T/R |
| FGD4536TM Fairchild | 67 ₽ | |
| FGD4536TM Fairchild | по запросу | |
| FGD4536TM
| по запросу | |
| FGD4536TM ON Semiconductor | по запросу | |
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Текстовая версия документа
FGD4536 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity
FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm -
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FGD4536 FGD4536TM-F065 TO252(D-PAK) 380 mm 16 mm -
360 V PDP Trench IGBT Electrical Characteristics of the IGBT
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A 360 - - V BVCES Temperature Coefficient of Breakdown V T GE = 0V, IC = 250 A - 0.4 - V/oC J Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 100 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 2.4 3.3 4.0 V IC = 20 A, VGE = 15 V - 1.19 - V I V C = 30 A, VGE = 15 V - 1.33 - V CE(sat) Collector to Emitter Saturation Voltage IC = 50 A, VGE = 15 V, TC = 25oC - 1.59 1.8 V IC = 50 A, VGE = 15 V, TC = 125oC - 1.66 - V
Dynamic Characteristics
Cies Input Capacitance - 1295 - pF VCE = 30 V, VGE = 0 V, Coes Output Capacitance - 56 - pF f = 1 MHz Cres Reverse Transfer Capacitance - 43 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 5 - ns VCC = 200 V, IC = 20 A, tr Rise Time - 20 - ns RG = 5 , VGE = 15 V, td(off) Turn-Off Delay Time Resistive Load, T - 41 - ns C = 25oC tf Fall Time - 182 - ns td(on) Turn-On Delay Time - 5 - ns VCC = 200 V, IC = 20 A, tr Rise Time - 21 - ns RG = 5 , VGE = 15 V, td(off) Turn-Off Delay Time Resistive Load, T - 43 - ns C = 125oC tf Fall Time - 249 - ns Qg Total Gate Charge - 47 - nC VCE = 200 V, IC = 20 A, Qge Gate to Emitter Charge V - 5.4 - nC GE = 15 V Qgc Gate to Collector Charge - 15 - nC
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Document Outline FGD4536 360 V PDP Trench IGBT 360 V ± 30 V 220 A 125 W 50 W -55 to +150 oC -55 to +150 oC - 1.0 oC/W - 62.5 oC/W FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - - - V - 100 mA - ±400 nA 3.3 4.0 V 1.19 - V 1295 - pF 56 - pF 43 - pF 5 - ns 20 - ns 41 - ns 182 - ns 5 - ns 21 - ns 43 - ns 249 - ns 47 - nC 5.4 - nC 15 - nC