Datasheet BS107A (ON Semiconductor) - 2

link to page 2 link to page 2 BS107A Small Signal MOSFET
250 mA, 200 V, N−Channel TO−92 Features
• AEC−Q101 Qualified and PPAP Capable
http://onsemi.com
• This is a Pb−Free Device*
250 mAMPS, 200 VOLTS RDS(on) = 6.4
W
MAXIMUM RATINGS
D (1)
Rating Symbol Value Unit
Drain − Source Voltage VDS 200 Vdc Gate−Source Voltage − Continuous VGS ±20 Vdc G (2) − Non−repetitive (tp ≤ 50 ms) VGSM ±30 Vpk Drain Current mAdc S (3) Continuous (Note 1) ID 250
N−Channel
Pulsed (Note 2) IDM 500 Total Device Dissipation @ TA = 25°C PD 350 mW
MARKING
Derate above 25°C
DIAGRAM
Operating and Storage Junction TJ, Tstg − 55 to °C Temperature Range 150 A Stresses exceeding those listed in the Maximum Ratings table may damage the BS107A device. If any of these limits are exceeded, device functionality should not be YWW G assumed, damage may occur and reliability may be affected.
TO−92
G 1. The Power Dissipation of the package may result in a lower continuous drain 1
CASE 29−11
current. 2
STYLE 30
3 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
BS107ARL1G TO−92 2000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2014 − Rev. 7 BS107/D