Datasheet BS107A (ON Semiconductor) - 4
| Производитель | ON Semiconductor |
| Описание | Small Signal MOSFET 250 mA, 200 V, N−Channel TO-92 |
| Страниц / Страница | 5 / 4 — BS107A. Figure 3. On Voltage versus Temperature. Figure 4. Capacitance … |
| Формат / Размер файла | PDF / 119 Кб |
| Язык документа | английский |
BS107A. Figure 3. On Voltage versus Temperature. Figure 4. Capacitance Variation. Figure 5. Transfer Characteristic
15 предложений от 12 поставщиков MOSFET; N-Ch; VDSS 200VDC; RDS(ON) 14Ω; ID 250mA; TO-92 (TO-226); PD 350mW; -55℃ |
| BS107ARL1G
ON Semiconductor | 42 ₽ | |
| BS107ARL1G
ON Semiconductor | 429 ₽ | |
| BS107ARL1G
ON Semiconductor | по запросу | |
| BS107ARL1G
ON Semiconductor | по запросу | |
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BS107A
10 200 TS) 180 VGS = 0 V 5.0 160 VGS = 10 V 250 mA 140 TAGE (VOL 2.0 120 1.0 ANCE (pF) 100 ACIT 80 C 100 mA iss 0.5 C, CAP 60 , DRAIN-SOURCE VOL 40 0.2 C 20 oss V DS Crss 0.1 0 -55 -35 -15 +5.0 25 45 65 85 105 125 145 0 10 20 30 40 50 T V J, JUNCTION TEMPERATURE (°C) DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 3. On Voltage versus Temperature Figure 4. Capacitance Variation
0.8 0.7 10 V 5.0 V 0.7 0.6 VGS = 10 V 0.6 (AMPS) 0.5 (AMPS) 0.5 0.4 0.4 0.3 4.0 V 0.3 , DRAIN CURRENT , DRAIN CURRENT 0.2 0.2 D(on)I D(on)I 0.1 0.1 3.0 V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 5. Transfer Characteristic Figure 6. Output Characteristic
0.7 0.6 10 V (AMPS) 0.5 5.0 V 0.4 0.3 4.0 V , DRAIN CURRENT 0.2 D(on)I 0.1 3.0 V 1.0 2.0 3.0 4.0 5.0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic http://onsemi.com 3
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