Datasheet PE4259 (pSemi)

Product Specification PE4259 SPDT High Power UltraCMOS® Product Description 10 MHz–3.0 GHz RF Switch
The PE4259 UltraCMOS® RF switch is designed to
Features
cover a broad range of applications from 10 MHz  Single-pin or complementary CMOS through 3000 MHz. This reflective switch integrates logic control inputs on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be  Low insertion loss: controlled using either single-pin or complementary  0.35 dB @ 1000 MHz control inputs. Using a nominal +3-volt power supply voltage, a typical input 1dB compression point of  0.5 dB @ 2000 MHz +33.5 dBm can be achieved.  Isolation of 30 dB @ 1000 MHz  The PE4259 is manufactured on pSemi’s High ESD tolerance of 2 kV HBM UltraCMOS process, a patented variation of silicon-  Typical input 1 dB compression point on-insulator (SOI) technology on a sapphire of +33.5 dBm substrate, offering the performance of GaAs with the  1.8V minimum power supply voltage economy and integration of conventional CMOS.  Ultra-small SC-70 package
Figure 1. Functional Diagram Figure 2. Package Type SC-70  
  6‐lead SC‐70  RFC D ES RF1 RF2 ESD ESD CMOS Control Driver CTRL CTRL or VDD DOC-02109 Document No. DOC-03694-5 │ www.psemi.com ©2005-2023 pSemi Corporation All rights reserved.
Page 1 of 10