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Datasheet IKCM15F60GA (Infineon) - 10

ПроизводительInfineon
ОписаниеDual In-Line Intelligent Power Module 3Φ -bridge 600V / 15A
Страниц / Страница17 / 10 — Control. Integrated. POwer. System. (CIPOS™). IKCM15F60GA. Dynamic. …
Версия02_05
Формат / Размер файлаPDF / 1.3 Мб
Язык документаанглийский

Control. Integrated. POwer. System. (CIPOS™). IKCM15F60GA. Dynamic. Parameters. (VDD. =. 15V. and. TJ. =. 25°C,. if. not. stated. otherwise). Value

Control Integrated POwer System (CIPOS™) IKCM15F60GA Dynamic Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) Value

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Умный модуль питания (IPM), IGBT, 600 В, 15 А, 2 кВ, DIP, CIPOS
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Control Integrated POwer System (CIPOS™) IKCM15F60GA Dynamic Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) Value Description Condition Symbol Unit min typ max Turn-on propagation delay time ton - 560 - ns VLIN, HIN = 5V, Turn-on rise time t I r - 25 - ns C = 10A, Turn-on switching time V tc(on) - 100 - ns DC = 300V Reverse recovery time trr - 150 - ns Turn-off propagation delay time V t LIN, HIN = 0V, off - 800 - ns Turn-off fall time IC = 10A, tf - 70 - ns Turn-off switching time VDC = 300V tc(off) - 120 - ns Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1200 - ns Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns Input filter time at LIN, HIN for turn V on and off LIN, HIN = 0V & 5V tFILIN - 290 - ns Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs Deadtime between low side and high DT side PWM 1.5 - - µs Deadtime of gate drive circuit DTIC - 380 - ns V IGBT turn-on energy (includes reverse DC = 300V, IC = 10A T E - 205 - µJ recovery of diode) J = 25°C on 150°C - 295 - VDC = 300V, IC = 10A IGBT turn-off energy TJ = 25°C Eoff - 180 - µJ 150°C - 270 - VDC = 300V, IC = 10A Diode recovery energy TJ = 25°C Erec - 70 - µJ 150°C - 120 - Bootstrap Parameters (TJ = 25°C, if not stated otherwise) Value Description Condition Symbol Unit min typ max Repetitive peak reverse voltage VRRM 600 - - V VS2 or VS3 = 300V, TJ = 25°C 35 Bootstrap diode resistance of VS2 and VS3 = 0V, TJ = 25°C 40 R - Ω U-phase 1 VS2 or VS3 = 300V, T BS1 - J = 125°C 50 VS2 and VS3 = 0V, T 65 J = 125°C Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS - 50 - ns Forward voltage drop IF = 20mA, VS2 and VS3 = 0V VF_BS - 2.6 - V 1 RBS2 and RBS3 have same values to RBS1. Datasheet 10 of 17 V 2.5 2017-09-06 Document Outline Table of contents CIPOS™ Control Integrated POwer System Features Target Applications Description System Configuration Pin Configuration Internal Electrical Schematic Pin Assignment Pin Description HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12) VFO (Fault-output and NTC, Pin 14) ITRIP (Over current detection function, Pin 15) VDD, VSS (Low side control supply and reference, Pin 13, 16) VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) NW, NV, NU (Low side emitter, Pin 17 - 19) W, V, U (High side emitter and low side collector, Pin 20 - 22) P (Positive bus input voltage, Pin 23) Absolute Maximum Ratings Module Section Inverter Section Control Section Recommended Operation Conditions Static Parameters Dynamic Parameters Bootstrap Parameters Thermistor Mechanical Characteristics and Ratings Circuit of a Typical Application Switching Times Definition Electrical characteristic Package Outline Revision history
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