Datasheet P2503NPG (Niko Semiconductor) - 2

P2503NPG NIKO-SEM N- & P-Channel Enhancement Mode DIP-8 Field Effect Transistor Halogen-Free & Lead-Free
VDS = 0V, VGS = ±20V N-Ch ±100 Gate-Body Leakage IGSS nA V P-Ch ±100 DS = 0V, VGS = ±20V VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS µA VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 VDS = -20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V N-Ch 20 On-State Drain Current1 ID(ON) A P-Ch -20 VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch 25 37 P-Ch 58 80 VGS = -4.5V, ID = -4A Drain-Source On-State Resistance1 R mΩ DS(ON) VGS = 10V, ID = 7A N-Ch 18 25 P-Ch 34 45 VGS = -10V, ID = -5A VDS = 5V, ID = 7A N-Ch 19 Forward Transconductance1 gfs S P-Ch 11 VDS = -5V, ID = -5A
DYNAMIC
N-Ch 790 Input Capacitance Ciss N-Channel P-Ch 690 VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175 Output Capacitance Coss P-Channel P-Ch 310 pF VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65 Reverse Transfer Capacitance Crss P-Ch 75 N-Ch 2 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω P-Ch 6.25
REV 1.2
2 Feb-09-2010