Контрактное производство электроники. Полный цикл работ

Datasheet BC637, BC639, BC639-16 (ON Semiconductor) - 3

ПроизводительON Semiconductor
ОписаниеHigh Current Transistors
Страниц / Страница5 / 3 — BC637, BC639, BC639−16. ELECTRICAL CHARACTERISTICS. Characteristic. …
Формат / Размер файлаPDF / 155 Кб
Язык документаанглийский

BC637, BC639, BC639−16. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS ON CHARACTERISTICS

16 предложений от 13 поставщиков
Двухполюсный плоскостной транзистор, TO-92 NPN 80V 1A
Maybo
Весь мир
BC639ZL1G
ON Semiconductor
20 ₽
LifeElectronics
Россия
BC639ZL1G
ON Semiconductor
по запросу
Кремний
Россия и страны СНГ
BC639ZL1G
ON Semiconductor
по запросу
AllElco Electronics
Весь мир
BC639ZL1G
ON Semiconductor
по запросу
АЦП азиатских производителей. Часть 1. Преобразователи последовательного приближения

Модельный ряд для этого даташита

Текстовая версия документа

link to page 3 link to page 3 link to page 3
BC637, BC639, BC639−16 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC637 60 − − BC639 80 − − Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) V(BR)CES Vdc (IC = 100 mAdc, IB = 0) BC639−16 120 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) BC637 60 − − BC639 80 − − Emitter − Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = 30 Vdc, IE = 0) − − 100 nAdc (VCB = 30 Vdc, IE = 0, TA = 125°C) − − 10 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 − − (IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 − 160 BC639 40 − 160 BC639−16ZLT1 100 − 250 (IC = 500 mA, VCE = 2.0 V) 25 − − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) − − 0.5 Base − Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) − − 1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) − 200 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 7.0 − Input Capacitance Cib pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 50 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION Device Package Shipping
† BC637G TO−92 5000 Units / Bulk (Pb−Free) BC637RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639G TO−92 5000 Units / Bulk (Pb−Free) BC639RL1G TO−92 2000 / Tape & Reel (Pb−Free) BC639ZL1G TO−92 2000 / Ammo Box (Pb−Free) BC639−16ZL1G TO−92 2000 / Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка