BCX42PNP Silicon AF and Switching Transistor • For general AF applications 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BCX41 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 TypeMarkingPin ConfigurationPackage BCX42 DKs 1 = B 2 = E 3 = C SOT23 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltage VCEO 125 V Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current, tp ≤ 10 ms ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation Ptot 330 mW TS ≤ 79 °C Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point1) RthJS ≤ 215 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-04
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