Datasheet BD234G, BD237G (ON Semiconductor) - 3
| Производитель | ON Semiconductor |
| Описание | Plastic Medium Power Bipolar Transistors |
| Страниц / Страница | 6 / 3 — BD237G (NPN), BD234G (PNP). Figure 2. Collector Saturation Region. Figure … |
| Формат / Размер файла | PDF / 172 Кб |
| Язык документа | английский |
BD237G (NPN), BD234G (PNP). Figure 2. Collector Saturation Region. Figure 3. Current Gain. Figure 4. “On” Voltages
42 предложений от 18 поставщиков Биполярный транзистор, универсальный, NPN, 80 В, 2 А, 25 Вт, TO-225AA, Through Hole |
| BD237G
ON Semiconductor | 30 ₽ | |
| BD237G
ON Semiconductor | от 45 ₽ | |
| BD237G
ON Semiconductor | от 61 ₽ | |
| BD237G
ON Semiconductor | от 101 ₽ | |
Модельный ряд для этого даташита
Текстовая версия документа
BD237G (NPN), BD234G (PNP)
1.0 TS) 0.8 I 0.5 A TAGE (VOL C = 0.1 A 0.25 A 1.0 A 0.6 TJ = 25°C 0.4 OR-EMITTER VOL 0.2 , COLLECT CEV 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
1000 1.5 700 VCE = 2.0 V 500 T 1.2 J = 25°C 300 200 TS) 0.9 T GAIN (NORMALIZED) 100 J = + 150°C VBE(sat) @ IC/IB = 10 70 T 0.6 J = + 25°C TAGE (VOL 50 V VOL BE @ VCE = 2.0 V 30 TJ = - 55°C 0.3 , DC CURRENT 20 FEh VCE(sat) @ IC/IB = 10 10 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Figure 4. “On” Voltages
1.0 0.7 D = 0.5 0.5 TRANSIENT 0.3 D = 0.2 ANCE 0.2 D = 0.1 SINGLE PULSE qJC(t) = r(t) qJC P(pk) 0.1 D = 0.05 RESIST qJC = 4.16°C/W MAX 0.07 D = 0.01 qJC = 3.5°C/W TYP 0.05 D CURVES APPLY FOR POWER THERMAL t1 0.03 PULSE TRAIN SHOWN t2 READ TIME AT t1 , NORMALIZED EFFECTIVE 0.02 T DUTY CYCLE, D = t r(t) J(pk) - TC = P(pk) qJC(t) 1/t2 0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response www.onsemi.com 3
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