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Datasheet NCP51460 (ON Semiconductor) - 4

ПроизводительON Semiconductor
ОписаниеMicropower Precision Voltage Reference
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NCP51460. Table 5. ELECTRICAL CHARACTERISTICS. Parameter. Test Conditions. Symbol. Min. Typ. Max. Unit. TYPICAL CHARACTERISTICS

NCP51460 Table 5 ELECTRICAL CHARACTERISTICS Parameter Test Conditions Symbol Min Typ Max Unit TYPICAL CHARACTERISTICS

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Источник опорного напряжения, прецизионный микромощный, NCP51460, 3.3В, SOT-23-3
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NCP51460SN33T1G
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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NCP51460 Table 5. ELECTRICAL CHARACTERISTICS
(VIN = VOUT + 2.5 V, IOUT = 0, CIN = 0.1 mF, COUT = 0 mF; For typical values TA = 25°C, for min/max values 0°C ≤ TA ≤ 100°C unless otherwise noted.) (Note 5).
Parameter Test Conditions Symbol Min Typ Max Unit
Output Voltage VOUT 3.267 3.3 3.333 V (−1%) (+1%) Line Regulation VIN = VOUT + 0.9 V to VOUT + 2.5 V RegLINE − 150 500 ppm/V VIN = VOUT + 2.5 V to VOUT + 20 V − 65 130 Load Regulation IOUT = 0 to 100 mA RegLOAD − 1100 4000 ppm/mA IOUT = 0 to 10 mA − 150 300 IOUT = 0 to 20 mA − 120 300 Dropout Voltage Measured at VOUT − 2% VDO V IOUT = 0 mA − 0.65 0.9 IOUT = 10 mA − 0.9 1.4 Quiescent Current IOUT = 0 mA, TA = 25°C IQ − 140 200 mA IOUT = 0 mA, 0°C ≤ TA ≤ 100°C − 220 Output Short Circuit Current VOUT = 0 V, TA = 25°C ISC − 80 − mA Reverse Leakage VIN = − 15 V, TA = 25°C ILEAK − 0.1 10 mA Output Noise Voltage (Note 6) f = 0.1 Hz to 10 Hz VN − 12 − mVPP f = 10 Hz to 1 kHz 18 mVrms Output Voltage Temperature 0°C ≤ TA ≤ 100°C TCO − 18 − ppm/°C Coefficient Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization, tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. The noise spectral density from 0.1 Hz to 10 Hz is measured, then the integral output noise voltage in this range is calculated. Finally the peak to peak noise is calculated as 5x integral output noise.
TYPICAL CHARACTERISTICS
3.332 3.332 I 3.327 OUT = 0 mA 3.327 VIN = VOUT + 2.5 V C 3.322 OUT = 0 mF 3.322 COUT = 0 mF 3.317 3.317 3.312 3.312 TAGE (V) VIN = VOUT + 20 V TAGE (V) 3.307 3.307 IOUT = 0 mA 3.302 3.302 3.297 3.297 3.292 3.292 V 3.287 IN = VOUT + 2.5 V VIN = VOUT + 0.9 V 3.287 I , OUTPUT VOL , OUTPUT VOL OUT = 10 mA 3.282 3.282 IOUT = 20 mA V OUT 3.277 3.277 V OUT 3.272 3.272 3.267 3.267 −40 −20 0 20 40 60 80 100 120 140 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Output Voltage vs. Temperature Figure 3. Output Voltage vs. Temperature www.onsemi.com 3
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