Datasheet 2N4401, MMBT4401 (ON Semiconductor) - 5

2N4401 / MMBT4401 Typical Performance Characteristics ) V N AI
500
GE ( G
0.4
A T V = 5V T CE EN
β
= 10
400
R R VOL
0.3
E 125 °C — NPN General-Purpose Amplifier
300
D CUR ITT M SE E
0.2
125 °C R-
200
PUL 25 °C TO 25 °C C CAL
100 0.1
LE PI - 40 °C Y - 40 °C - T - COL
0
T FE
0.1 0.3 1 3 10 30 100 300
A h S
1 10 100 500
I - CE C COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) V Figure 3. Typical Pulsed Current Gain vs. Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Collector Current ) ) V (V ( E
1
E G
β 1
= 10 AG V = 5V CE TA LT L O - 40 °C
0.8
V - 40 °C VO
0.8
25 °C ON R 25 °C ITTER E
0.6
M T 125 °C E IT
0.6
125 °C M SE- -E A E
0.4
B S - T
0.4
AS - BA ) BE N V (O
0.2 1 10 100 500
BE
0.1 1 10 25
I V C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage vs. vs. Collector Current Collector Current
500
A) (n
20
f = 1 MHz T
100
V = 40V CB EN ) R F p R
16
(
10
U E C NC OR
12
TA
1
CT CI C te E A L P L
8
A O
0.1
C - C C ob O
4
I CB
25 50 75 100 125 150 0.1 1 10 100
T A - AMBIENT TEMPERATURE ( C) ° REVERSE BIAS VOLTAGE (V) Figure 7. Collector Cut-Off Current vs. Figure 8. Emitter Transition and Output Capacitance Ambient Temperature vs. Reverse Bias Voltage
www.onsemi.com 4