Datasheet MTP20N20E (ON Semiconductor) - 7

MTP20N20E SAFE OPERATING AREA
100 600 VGS = 20 V ID = 20 A SINGLE PULSE 500 T O−SOURCE (mJ) 10 C = 25°C 10µs (AMPS) 400 100µs 1.0 1ms 300 10ms dc AVALANCHE ENERGY 200 , DRAIN CURRENT 0.1 I D RDS(on) LIMIT , SINGLE PULSE DRAIN−T THERMAL LIMIT E AS 100 PACKAGE LIMIT 0.01 0 0.1 1.0 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.0 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 RθJC(t) = r(t) RθJC 0.05 THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE t1 READ TIME AT t1 0.01 r(t) t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t, TIME (ms)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6