Datasheet MTP33N10E (ON Semiconductor) - 7

MTP33N10E SAFE OPERATING AREA
1000 550 VGS = 20 V 500 ID = 33 A SINGLE PULSE 100 TC = 25°C 450 O−SOURCE (mJ) 400 (AMPS) 350 10 100μs 300 1ms 250 1.0 10ms 200 dc , DRAIN CURRENT R 150 DS(on) LIMIT AVALANCHE ENERGY I D 0.1 THERMAL LIMIT 100 PACKAGE LIMIT , SINGLE PULSE DRAIN−T 50 E AS 0.01 0 0.1 1.0 10 100 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.0 D = 0.5 ANCE 0.2 RESIST 0.1 P 0.1 (pk) RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.05 PULSE TRAIN SHOWN 0.02 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) 0.01 t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t, TIME (ms)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6