Datasheet BTA206X-800ET (WeEn Semiconductors) - 2

WeEn Semiconductors BTA206X-800ET 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 15 mA VT on-state voltage IT = 7 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67% 50 - - V/μs voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 1 - - A/ms commutating current dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 2 - - A/ms dVcom/dt = 10 V/μs; gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 5 - - A/ms dVcom/dt = 1 V/μs; gate open circuit
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb n.c. mounting base; isolated 1 2 3
6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date
BTA206X-800ET TO220F BTA206X-800ET,127 Tube 50 SOT186A 14-Nov-2013
7. Marking Table 4. Marking codes Type number Marking codes Assembly factory: d Assembly factory: A
BTA206X-800ET BTA206X BTA206X 800ET 800ET PJdxxxx xx PJAxxxx xx BTA206X-800ET All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet 28 August 2023 2 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents