HER101G – HER108G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating CurveFig.2 Typical Junction Capacitance 2 100 ) A( TN RE ) F p( HER101G-HER105G CUR E RD A 1 NC A 10 CIT A ORW P F HER106G-HER108G CA GE RA E V f=1.0MHz A Vsig=50mVp-p 0 1 25 50 75 100 125 150 1 10 100 AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.3 Typical Reverse CharacteristicsFig.4 Typical Forward Characteristics 100 ) 10 A) A 10 µ ( T =100°C HER101G-HER104G J NT NT E E RR UF1DL H W E R105G RR 1 CU 10 D CU E R HER106G-HER108G A T =125°C RS J E ) T =25°C V J T =75°C 1 A( 0.1 J ORW F RE 1 OUS OUS NE NE 0.01 A T =25°C A T J T N N Pulse width 300μs A A T T 1% duty cycle 0.1 Pulse width INS INS 0.1 10 20 30 40 50 60 70 80 90 100 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 35 ) A( 30 8.3ms single half sine wave NT RE 25 UR C 20 RGE U S 15 RD A 10 ORW F K A 5 E P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2104
