IRFP22N60Kwww.vishay.com Vishay Siliconix
Power MOSFETD
FEATURES• Low gate charge Qg results in simple drive
TO-247ACrequirement Available • Improved gate, avalanche and dynamic dV/dt Available G ruggedness • Fully characterized capacitance and avalanche voltage and current S D S • Enhanced body diode dV/dt capability G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note* This datasheet provides information about parts that are
PRODUCT SUMMARYRoHS-compliant and / or parts that are non RoHS-compliant. For VDS (V) 600 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.24 Please see the information / tables in this datasheet for details Qg (max.) (nC) 150
BENEFITSQgs (nC) 45 • Hard switching primary or PFS switch Qgd (nC) 76 Configuration Single • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching • Motor drive
ORDERING INFORMATIONPackage TO-247AC Lead (Pb)-free IRFP22N60KPbF
ABSOLUTE MAXIMUM RATINGS(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNITDrain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 22 Continuous drain current VGS at 10 V ID TC = 100 °C 14 A Pulsed drain current a IDM 88 Linear derating factor 2.9 W/°C Single pulse avalanche energy b EAS 380 mJ Repetitive avalanche current a IAR 22 A Repetitive avalanche energy a EAR 37 mJ Maximum power dissipation TC = 25 °C PD 370 W Peak diode recovery dV/dt c dV/dt 15 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 300
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 Ω, IAS = 22 A (see fig. 12) c. ISD ≤ 22 A, dI/dt ≤ 360 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0046, Rev. C, 24-Jan-2021
1Document Number: 91208 For technical questions, contact:
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