Datasheet IRFP22N60K (Vishay) - 2

IRFP22N60K
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.34
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA d - 0.30 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA VDS = 600 V, VGS = 0 V - - 50 Zero gate voltage drain current IDSS μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 13 A b - 0.240 0.280 Ω Forward transconductance gfs VDS = 50 V, ID = 13 A b 11 - - S
Dynamic
Input capacitance Ciss V - 3570 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 350 - f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 36 - pF VDS = 1.0 V, f = 1.0 MHz - 4710 - Output capacitance Coss VGS = 0 V VDS = 480 V, f = 1.0 MHz - 92 - Effective output capacitance Coss eff. VDS = 0 V to 480 V - 180 - Total gate charge Qg - - 150 I Gate-source charge Qgs V D = 22 A, VDS = 480 V GS = 10 V - - 45 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 76 Turn-on delay time td(on) - 26 - VDD = 300 V, ID = 22 A, Rise time tr - 99 - Rg = 6.2, VGS = 10 V, ns Turn-off delay time td(off) see fig. 10 b - 48 - Fall time tf - 37 -
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 22 D showing the integral reverse A Pulsed diode forward current a I G SM - - 88 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 22 A, VGS = 0 V b - - 1.5 V TJ = 25 °C - 590 890 Body diode reverse recovery time trr ns TJ = 125 °C I - 670 1010 F = 22 A, dI/dt = 100 A/μs b TJ = 25 °C - 7.2 11 Body diode reverse recovery charge Qrr μC TJ =1 25 °C - 8.5 13 Reverse recovery current IRRM TJ = 25 °C - 26 39 Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S22-0046, Rev. C, 24-Jan-2021
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