Datasheet FDC604P (Fairchild)

F DC60
June 2000
PRELIMINARY 4P FDC604P P-Channel 1.8V Specified PowerTrench
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MOSFET General Description Features
This P-Channel 1.8V specified MOSFET uses • –5.5 A, –20 V. R Fairchild’s low voltage PowerTrench process. It has DS(ON) = 0.033 Ω @ VGS = –4.5 V been optimized for battery power management RDS(ON) = 0.043 Ω @ VGS = –2.5 V applications. RDS(ON) = 0.060 Ω @ VGS = –1.8 V
Applications
• Fast switching speed. • Battery management • High performance trench technology for extremely • Load switch low RDS(ON) • Battery protection
S D D
1 6 2 5
G D
3 4
TM D SuperSOT -6 Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) -5.5 A – Pulsed -20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
.604 FDC604P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDC604P Rev B (W)