F DC60Typical Characteristics4P 5 3500 V I DS = -5V f = 1MHz D = -5.5A -10V 3000 V 4 GS = 0 V -15V 2500 C 3 ISS 2000 1500 2 1000 C 1 OSS 500 CRSS 0 0 0 5 10 15 20 25 0 5 10 15 20 Qg, GATE CHARGE (nC)-VDS, DRAIN TO SOURCE VOLTAGE (V)Figure 7. Gate Charge Characteristics.Figure 8. Capacitance Characteristics. 100 5 SINGLE PULSE RDS(ON) LIMIT 100µs R 4 θJA = 156oC/W 10 1ms TA = 25oC 10ms ) 100ms 3 (W 1 R 1s E DC 2 POW VGS = -4.5V 0.1 SINGLE PULSE Rθ 1 JA = 156oC/W TA = 25oC 0.01 0 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V)SINGLE PULSE TIME (SEC)Figure 9. Maximum Safe Operating Area.Figure 10. Single Pulse MaximumPower Dissipation. 1 NT IE D = 0 .5 R θJA(t) = r(t) + R θJA RANS R T θ J A = 1 5 6 ° C / W E 0 .1 IVANCE 0 .2 TTCISESF P (p k ) 0 . 1 FREELDA t1 E 0 . 0 5 M T J - T A = P * R θJA(t) IZR 0 .0 1 t2 LE D u ty C y c le , D = t1 / t2 AH 0 .0 2 MTR 0 .0 1 O N S IN G L E P U L S E r(t), 0 .0 0 1 0 .0 0 0 1 0 . 0 0 1 0 .0 1 0 .1 1 1 0 1 0 0 1 0 0 0 t1 , T IM E (s e c )Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC604P Rev B(W)