Datasheet TCST1230 (Vishay) - 2

TCST1230
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR)
Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current IC 100 mA Power dissipation Tamb ≤ 25 °C PV 150 mW Junction temperature Tj 100 °C
ABSOLUTE MAXIMUM RATINGS
400 300 Coupled device 200 Phototransistor IR-diode 100 P - Power Dissipation (mW) 0 0 30 60 90 120 150 95 11088 T amb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER
Collector current VCE = 10 V, IF = 20 mA IC 0.5 14 mA Collector emitter saturation I voltage F = 20 mA, IC = 0.2 mA VCEsat 0.4 V
INPUT (EMITTER)
Forward voltage IF = 60 mA VF 1.25 1.5 V Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF
OUTPUT (DETECTOR)
Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 10 μA VECO 7 V Collector dark current VCE = 25 V, IF = 0 A, E = 0 lx ICEO 10 100 nA
SWITCHING CHARACTERISTICS
I Turn-on time C = 1 mA, VCE = 5 V, t R on 15 μs L = 100 Ω (see figure 2) I Turn-off time C = 1 mA, VCE = 5 V, t R off 10 μs L = 100 Ω (see figure 2) Rev. 2.0, 21-Sep-12
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