Composite Transistors XN6537 Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1 6 ■ Features +0.1 –0.05 +0.1 –0.05 ±0.1 0.3 0.5 5 2 0.95 1.45 ● Two elements incorporated into one package. +0.2 –0.05 ±0.1 2.9 1.9 ● Reduction of the mounting area and assembly cost by one half. 4 0.95 3 ■ Basic Part Number of Element +0.1 –0.06 +0.2 –0.1 0.16 ● 2SC3110 × 2 elements 1.1 0.8 0.1 to 0.3 0.4±0.2 0 to 0.05 ■ Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Base (Tr2) 2 : Base (Tr1) 5 : Emitter (Tr2) Parameter Symbol Ratings Unit 3 : Collector (Tr2) 6 : Emitter (Tr1) Collector to base voltage V EIAJ : SC–74 CBO 15 V Mini Type Package (6–pin) Collector to emitter voltage VCEO 12 V Rating of Emitter to base voltage VEBO 2.5 V Marking Symbol: 7H element Collector current IC 30 mA Internal Connection Peak collector current ICP 50 mA Total power dissipation PT 300 mW Tr1 6 1 Overall Junction temperature Tj 150 ˚C Storage temperature T 5 2 stg –55 to +150 ˚C 4 3 Tr2 ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 2V, IC = 0 1 µA Forward current transfer ratio hFE VCE = 10V, IC = 10mA 40 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 10mA 0.5 0.99 Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz 4.5 GHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 1.2 pF Forward transfer gain | S21e |2 VCE = 10V, IC = 20mA, f = 0.8GHz 12 dB Power gain GUM VCE = 10V, IC = 20mA, f = 0.8GHz 14 dB Noise figure NF VCE = 10V, IC = 5mA, f = 0.8GHz 1.3 dB *1 Ratio between 2 elements 1
