Datasheet XN6537 (Panasonic) - 2

Composite Transistors XN6537 PT — Ta IC — VCE IC — VBE 500 30 60 Ta=25˚C VCE=10V ) 25˚C 25 50 400 (mW ) T (mA (mA Ta=75˚C – 25˚C 20 40 C IB=300µA C 300 15 250µA 30 200 200µA 10 150µA 20 100 Collector current I 100µA Collector current I 5 10 Total power dissipation P 50µA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC hFE — IC fT — IC 100 240 8 ) IC/IB=10 VCE=10V VCE=10V (V Ta=25˚C 30 FE ) 200 CE(sat) 10 (GHz 6 160 T 3 Ta=75˚C 1 120 4 25˚C 0.3 80 – 25˚C 0.1 2 25˚C Ta=75˚C 40 Transition frequency f 0.03 Forward current transfer ratio h – 25˚C Collector to emitter saturation voltage V 0.01 0 0 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 –1 – 3 –10 – 30 –100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB NF — IC S11, S22 1.2 8 1 0.8 VCE=10V ) f=1MHz 1.5 IC=20mA I 0.6 E=0 Rg=50Ω 2 E: earth (pF Ta=25˚C 7 VCE=10V 1.0 0.4 f=800MHz 3 ob ) 6 4 0.2 5 0.8 (dB 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 1000MHz 0.6 4 800MHz 500MHz S22 1000MHz S11 800MHz –10 500MHz 3 – 0.2 –5 0.4 –4 Noise figure NF 2 –3 – 0.4 0.2 –2 – 0.6 1 – 0.8 –1.5 Collector output capacitance C –1 0 0 1 3 10 30 100 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) 2