Datasheet BLF881, BLF881S (Ampleon) - 4

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BLF881; BLF881S UHF power LDMOS transistor Table 7. RF characteristics
…continued Th = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit DVB-T (8k OFDM)
VDS drain-source voltage - 50 - V IDq quiescent drain current - 0.5 - A PL(AV) average output power - 33 - W Gp power gain 20 21 - dB D drain efficiency 30 34 - % IMDshldr intermodulation distortion shoulder [1] - 33 30 dBc PAR peak-to-average ratio [2] - 8.3 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 001aal074 200 Coss (pF) 160 120 80 40 0 0 20 40 60 80 VDS (V) VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 4 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents