Datasheet BLF881, BLF881S (Ampleon) - 5

BLF881; BLF881S UHF power LDMOS transistor 7. Application information 7.1 Narrowband RF figures 7.1.1 CW
001aal075 23 70 Gp ηD (dB) (%) 22 Gp 60 21 50 20 40 ηD 19 30 18 20 17 10 16 0 0 40 80 120 160 200 PL (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as function of load power; typical values 7.1.2 2-Tone
0001aal076 001aal077 23 70 0 Gp ηD (dB) (%) G 22 p 60 IMD3 (dBc) 21 50 −20 20 40 ηD 19 30 −40 18 20 17 10 16 0 −60 0 40 80 120 160 0 40 80 120 160 PL(AV) (W) PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. narrowband 860 MHz test circuit.
Fig 3. 2-Tone power gain and drain efficiency as Fig 4. 2-Tone third order intermodulation distortion function of average load power; typical values as a function of average load power; typical values
BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 5 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents