Datasheet MJL3281A, MJL1302A (ON Semiconductor) - 2

MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) 260 − Collector Cutoff Current ICBO Adc (VCB = 260 Vdc, IE = 0) − 50 Emitter Cutoff Current IEBO Adc (VEB = 5 Vdc, IC = 0) − 5
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased IS/b Adc (VCE = 50 Vdc, t = 1 s (non−repetitive) 4 − (VCE = 100 Vdc, t = 1 s (non−repetitive) 1 −
ON CHARACTERISTICS
DC Current Gain hFE (IC = 500 mAdc, VCE = 5 Vdc) 75 150 (IC = 1 Adc, VCE = 5 Vdc) 75 150 (IC = 3 Adc, VCE = 5 Vdc) 75 150 (IC = 5 Adc, VCE = 5 Vdc) 75 150 (IC = 8 Adc, VCE = 5 Vdc) 45 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 Adc, IB = 1 Adc) − 3
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) 30 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − 600 Product parametric performance is indicated in the indicated by the Electrical Characteristics if operated under Electrical Characteristics for the listed test conditions, different conditions. unless otherwise noted. Product performance may not be
www.onsemi.com 2