Datasheet NCL30000 (ON Semiconductor) - 9

NCL30000 TYPICAL CHARACTERISTICS
16 220 VMFP = 2.6 V 215 14 mA) 210 mA) 12 205 200 10 , ERROR AMPLIFIER 195 CURRENT ( , ERROR AMPLIFIER SINK ce) 190 8 sour sink) SOURCE CURRENT ( VMFP = 0.5 V I EA( 185 I EA( 6 180 −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 8. Error Amplifier Sink Current vs. Figure 9. Error Amplifier Source Current vs.
mS)
Junction Temperature Junction Temperature
mS) 125 200 ANCE ( 200 120 ANCE ( 180 180 Phase 160 160 q 115 , PHASE (DEGREES) 140 140 110 120 Transconductance 120 105 100 100 100 80 80 RControl = 100 kW 60 60 95 CControl = 2 pF 40 VMFP = 2.5 Vdc, 1 Vac 40 90 V 20 CC = 12 V T 20 A = 25C 85 0 0 −50 −25 0 25 50 75 100 125 0.01 0.1 1 10 100 1000 gm, ERROR AMPLIFIER TRANSCONDUCT TJ, JUNCTION TEMPERATURE (C) f, FREQUENCY (kHz) gm, ERROR AMPLIFIER TRANSCONDUCT
Figure 10. Error Amplifier Transconductance Figure 11. Error Amplifier Transconductance vs. Junction Temperature and Phase vs. Frequency
1.0 278 TAGE mA) 0.9 276 0.8 274 0.7 272 0.6 270 TE DRIVE PULSES (V) 0.5 268 , Ct CHARGE CURRENT ( , MINIMUM CONTROL VOL GENERA 0.4 266 fset) (of TO I charge 0.3 264 Ct −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 12. Minimum Control Voltage to Generate Figure 13. On Time Capacitor Charge Current Drive Pulses vs. Junction Temperature vs. Junction Temperature http://onsemi.com 8