BSS308PEParameterSymbol ConditionsValuesUnitmin.typ.max.Thermal characteristics Thermal resistance, R junction - ambient thJA minimal footprint1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0 V Drain-source leakage current DS=-30V, V GS=0 V, I DSS - - -1 μA T j=25 °C V DS=-30V, V GS=0V, - - -100 T j=150 °C Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA V Drain-source on-state resistance GS=-4.5 V, R DS(on) - 88 130 mΩ I D=-1.7 A V GS=-10 V, I D=-2 A - 62 80 |V Transconductance DS|>2|I D|R DS(on)max, g fs 4.6 - S I D=-1.6 A 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.03 page 2 2011-07-08
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